INFLUENCE OF AN ELECTRICAL-FIELD ON OPTICAL-RECORDING IN CHALCO-HALIDE GLASSES

The present investigations concern holographic recording on thin films of the systems Se-Ag-I and Ge-Se-AgI. After optimization of compositi ons and intensity of the laser beam for recording on these films, expe riments are conducted on a three-layer structure-SnO2-chalco-halide-Au . Various bias voltages were applied on this structure in the process of optical recording. It is established that depending on the voltage bias the sensitivity of the layers can be increased. The mechanism of this process is discussed in terms of the occurrence of defects in the glassy film, as well as the processes in the heterojunction SnO2-chal co-halide film under different electric field polarities. (C) 1998 Els evier Science B.V. All rights reserved.