Am. Andriesh et al., THE TEMPERATURE-DEPENDENCE OF THE TIME-AVERAGED DRIFT MOBILITY IN AS2S3 GLASS DERIVED FROM PA MEASUREMENTS, Journal of non-crystalline solids, 230, 1998, pp. 820-823
The temperature dependence of the bimolecular recombination rate coeff
icient (b) and the time-averaged drift mobility in As2S3 glass was stu
died in the range 77-330 K on the basis of steady-state photoinduced a
bsorption (PA) measurements. PA measurements have been carried out on
glass samples in the form of optical fibres. The steady-state PA coeff
icient varies approximately as the square root of the excitation Light
intensity, indicating a bimolecular mechanism for the recombination o
f excess carriers. In most disordered semiconductors carrier transport
is diffusion-limited and taking into account that for chalcogenide gl
asses the electron drift mobility mu(p), << mu(p) the hole drift mobil
ity, the latter was derived from mu(p) = (EE0/e)b. The time-averaged m
obility, mu(p), was found to be thermally activated at the higher temp
eratures with activation energy similar to 0.9 eV, and with mu(p) simi
lar to 10(-10) cm(2)/Vs at 300 K, but almost temperature independent b
elow approximately 130 K. (C) 1998 Elsevier Science B.V. All rights re
served.