DETERMINATION OF FREE-CARRIER RECOMBINATION LIFETIME IN AMORPHOUS-SEMICONDUCTORS - APPLICATION TO THE STUDY OF IODINE DOPING EFFECT IN ARSENIC TRISELENIDE

A method for measuring the monomolecular recombination lifetime in amo rphous semiconductors is described. The present method is based on the measurement of localized-state distributions from transient photocond uctivity data and on the fitting of computer-generated photocurrent tr ansients using the measured localized-state distributions to experimen tal data, by which the monomolecular recombination lifetime is determi ned. The present method is applied to the study of the iodine doping e ffects in amorphous arsenic triselenide, and it is found that the iodi ne doping does not change the localized-state distribution or monomole cular recombination lifetime. (C) 1998 Elsevier Science B.V. All right s reserved.