NANOPARTICLE FORMATION IN LOW-PRESSURE SILANE PLASMAS - BRIDGING THE GAP BETWEEN A-SI-H AND MU-C-SI FILMS

Detailed analysis of the structure of silicon films prepared under par ticular rf glow discharge conditions conclusively show that nanometer- size (similar to 2 nm) ordered regions can be present in the matrix of this disordered semiconductor. The obtaining of such a type of 'nanos tructured' silicon films, referred to as polymorphous silicon in the f ollowing, under a wide range of plasma conditions, is attributed to th e contribution of silicon 'nanoparticles' to the growth of the films. (C) 1998 Elsevier Science B.V. All rights reserved.