SHORT-PULSE LASER CRYSTALLIZATION AND STRUCTURING OF A-GE

Laser pulses in the nanosecond range were used to crystallize and stru cture (lateral dimensions less than or equal to 1 mu m) amorphous germ anium thin films. The crystallized material consists of grains with si zes increasing from about 5 to more than 20 nm as a function of laser pulse energy. Arrays of polycrystalline Ge dots (diameter similar to 1 mu m, period similar to 5 mu m) were produced by bringing three laser beams to interference on the sample surface. These arrays can be used as seeds for solid-phase growth of polycrystalline areas by thermal a nnealing below 450 degrees C. (C) 1998 Elsevier Science B.V. All right s reserved.