We use optical, photocurrent and photothermal deflection spectroscopie
s to study defects in microcrystalline silicon (mu c-Si) thin films an
d diamond layers. Enhanced light absorption in mu c-Si films and solar
cells is due to several contributions: light scattering, change in th
e optical transition probability for strained and surface atoms and re
sidual amorphous fraction. Low defect density (optical absorption with
a coefficient, alpha, smaller than 0.1 cm(-1) at about 0.8 eV, as mea
sured by the constant photocurrent method), amorphous volume fraction
below 10% and a distinct surface texture is typical for a material yie
lding a good efficiency mu c-Si solar cells. Main defects in heteroepi
taxial chemical vapor deposition diamond films are discussed. (C) 1998
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