AMORPHOUS-SILICON SUBOXIDE LIGHT-EMITTING-DIODES

Optical absorption was measured on undoped as deposited and annealed a morphous silicon suboxide (a-SiOx:H) samples prepared by plasma enhanc ed chemical vapour deposition. The subgap absorption was reduced by on e order of magnitude upon annealing. Annealing of a-SiOx:H p-i-n struc tures at 250 degrees C increased the forward current densities and shi fted the dominant electroluminescence peak from 1.1 eV to 1.3 eV, indi cating a change in the recombination mechanism due to a lower defect d ensity in the intrinsic layer. The total electroluminescence efficienc y increased by a factor of 3 upon annealing and reached similar to 10( -3)%. (C) 1998 Elsevier Science B.V. All rights reserved.