ROOM-TEMPERATURE ELECTROLUMINESCENCE OF ER-DOPED HYDROGENATED AMORPHOUS-SILICON

We have observed room-temperature erbium-ion electroluminescence in er bium-doped amorphous silicon. Electrical conduction through the struct ure is controlled by thermally activated ionization of deep D- defects in an electric field and the reverse process of capture of mobile ele ctrons by D-o states. Defect-related Auger excitation (DRAE) is respon sible for excitation of erbium ions located close to dangling-bond def ects. Our experimental data are consistent with the mechanisms propose d. (C) 1998 Elsevier Science B.V. All rights reserved.