SIMULATION OF DEEP DEFECT FILLING IN N-TYPE SCHOTTKY-BARRIER STRUCTURES

Authors
BRUGGEMANN R CORDES H LIPS K
Citation
R. Bruggemann et al., SIMULATION OF DEEP DEFECT FILLING IN N-TYPE SCHOTTKY-BARRIER STRUCTURES, Journal of non-crystalline solids, 230, 1998, pp. 1173-1176
Citations number
6
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
230
Year of publication
1998
Part
B
Pages
1173 - 1176
Database
ISI
SICI code
0022-3093(1998)230:<1173:SODDFI>2.0.ZU;2-P
Abstract
We simulate the charge filling and emission dynamics of n-type a-Si:H Schottky barrier structures assuming a fixed density of states. We fin d that the spatial distribution of trapped charge in the depletion reg ion depends strongly on the pulse parameters of the experiment. We wil l discuss to what extent this affects the charge filling and emission dynamics. (C) 1998 Elsevier Science B.V. All rights reserved.