SPIN-DEPENDENT PROCESSES IN A-SI-H SCHOTTKY-BARRIER DIODES

We report on the results of electrically detected magnetic resonance ( EDMR) on a-Si:H Schottky barrier diodes. We identify a quenching signa l in the dark forward current at g = 2.0051. The intensity of this sig nal increases with forward bias and is thermally activated. The origin of the EDMR signal is discussed in terms of minority carrier injectio n and is attributed to recombination of electrons with neutral danglin g bond in the interior of the device. We compare the experimental resu lts with numerical calculations of the EDMR amplitude and find that de pending on the sample parameters the EDMR signal is a complicated supe rposition of quenching and enhancing effects. (C) 1998 Elsevier Scienc e B.V. All rights reserved.