CONSTANT-CURRENT FORMING IN CR P(+)A-SI-H/V THIN-FILM DEVICES/

Experimental results on the constant current stressing and forming of hydrogenated amorphous silicon (a-Si) Cr/p(+)-V thin film devices are presented. In the initial stage of electro-forming by constant current stressing, with increasing injection of charge via either increasing bias or time, the current =f(upsilon) properties of devices exhibit an instability, as shown by a decrease in the reverse current. Eventuall y, with further increase in the current bias, the local current densit y reaches a critical value I-F, and a rapid 'runaway' processes occurs , which results in an irreversible change of the initial higher resist ance state into a permanent 'formed' state of lower resistance. (C) 19 98 Elsevier Science B.V. All rights reserved.