MODULATION OF THRESHOLD VOLTAGES IN BIDIRECTIONAL A-SI-H SWITCHING DEVICES

The design and production of a two-terminal switching device with tuna ble threshold voltage are presented. The device consists of an n(+)-i- p(-)-i-n(+) amorphous silicon stacked structure. The operation modes a nd the effect of the structure parameters on the threshold voltage are investigated with a numerical device model. Manufactured devices prod uced with varying the thickness of the different layers of the structu re present threshold voltages ranging from 1 to 30 V. (C) 1998 Elsevie r Science B.V. All rights reserved.