MOBILITY OF OLIGOMERIC THIN-FILM TRANSISTORS PREPARED AT RAPID GROWTH-RATES BY PULSED-LASER DEPOSITION

We present results on film transistors and related structures, prepare d by pulsed laser deposition (PLD) of pentacene and thienylene-vinylen e oligomers. PLD produces an improvement in electronic properties rela tive to conventional thermal evaporation, while allowing films to be d eposited at least a hundred times faster. Atomic force microscopy reve als that the properties are associated with increases in molecular ord ering. Pentacene thin film transistors having a mobility (4 x 10(-2) c m(2) V-1 s(-1)) and threshold voltage (0.3 V), and thus being viable f or practical applications, have already been produced by PLD using roo m temperature substrates. Moreover, structural and conductivity data i ndicate that improvements will result when devices are deposited at hi gher substrate temperatures. (C) 1998 Elsevier Science B.V. All rights reserved.