COLOR SEPARATION IN A-SI-H BASED P-I-I-N SENSORS - TEMPERATURE AND INTENSITY DEPENDENCE

We report investigations of temperature and intensity dependencies of two p-i-i-n colour sensor devices of hydrogenated amorphous silicon an d silicon carbide. They differ only in their band gaps of the front tw o layers causing an expected change in the detectable spectral range. Current/voltage measurements between 253 and 373 K and different photo n fluxes (10(13) to 10(15) photons cm(-2) s(-1)) for illumination in t he red, green and blue spectral range show a dependence on both parame ters. The photocurrent response for the red spectral range is more aff ected than for shorter wavelengths. Colour detection remains possible over the whole parameter range. Additionally, numerical modelling comp lements the study and gave insight into the internal physical processe s. (C) 1998 Elsevier Science B.V. All rights reserved.