New results are given on the solid phase recrystallization growth of Z
nSe. The orientation relationship between initial texture of the start
ing material and SPR grown crystals is studied by X-ray diffraction. T
wins are shown to be already present in the micrograins of the source
material from SEM and TEM observations. Attempts to decrease twinning
using the strain-anneal method are reported. The SPR kinetics is studi
ed and the activation energy of the SPR process is roughly estimated t
o be about 400 kJ/mole using a simple model. The SPR growth is shown t
o be completely inhibited by residual donor impurities that have been
identified to be mainly Al, Cl and In by photoluminescence and resonan
t Raman scattering experiments. Given the significant role of native d
efects in the SPR growth kinetics, a concentration of Zn or Se vacanci
es is roughly estimated from lattice parameters measurements to be of
some 10(19) cm(-3) by means of a vacancy model. (C) 1998 Elsevier Scie
nce B.V. All rights reserved.