FANO INTERFERENCE IN PERIODIC GAAS DOPING MULTILAYERS

Fano-like interferences between electronic and LO-vibronic inelastic l ight scattering are reported for periodic GaAs doping multilayers at r oom temperatures as a function of the orientation of the sample crysta llographic axes relative to the linear polarization of the incident ra diation field. It is shown that the different degrees of lineshape asy mmetries observed in the near-resonant polarized Raman spectra of the sample in a backscattering geometry may be attributed to the change of the scattering amplitude of the deformation-potential LO phonon relat ive to scattering efficiency associated with the electronic channel.