INTERRELATION OF RESISTIVITY AND INELASTIC ELECTRON-PHONON SCATTERINGRATE IN IMPURE NBC FILMS

Citation
Ks. Ilin et al., INTERRELATION OF RESISTIVITY AND INELASTIC ELECTRON-PHONON SCATTERINGRATE IN IMPURE NBC FILMS, Physical review. B, Condensed matter, 57(24), 1998, pp. 15623-15628
Citations number
33
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
57
Issue
24
Year of publication
1998
Pages
15623 - 15628
Database
ISI
SICI code
0163-1829(1998)57:24<15623:IORAIE>2.0.ZU;2-1
Abstract
A complex study of the electron-phonon interaction in thin NbC films w ith electron mean free path l=2-13 nm gives strong evidence that elect ron scattering is significantly modified due to the interference betwe en electron-phonon and elastic electron scattering from impurities. Th e interference T-2 term, which is proportional to the residual resisti vity, dominates over the Bloch-Gruneisen contribution to resistivity a t low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modula ted electromagnetic radiation. In the temperature range 1.5-10 K the r elaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence similar to T-n, with the exponent n = 2.5-3. This behavior is explained well by the theory of the electron -phonon-impurity interference taking into account the electron couplin g with transverse phonons determined from the resistivity data.