The interactions between hydrogen and crystalline, amorphous and polyc
rystalline silicon are investigated from a theoretical and computation
al point of view. A comprehensive overview of various configurations i
s provided. Particular attention is devoted to structures that play an
important role in amorphous and polycrystalline material, such as H i
nserted into Si-Si bonds, and H at dangling bonds. An examination of t
he dissociation mechanism of Si-H bonds suggests an explanation for th
e observed difference in stability between hydrogen and deuterium at d
angling bonds. Finally, a new model to explain stretched exponential r
elaxation in hydrogenated amorphous silicon is presented. (C) 1998 Els
evier Science B.V. All rights reserved.