LOCAL HYDROGEN REACTIONS OF H-2-ASTERISK IN A-SI-H

Citation
J. Robertson et al., LOCAL HYDROGEN REACTIONS OF H-2-ASTERISK IN A-SI-H, Journal of non-crystalline solids, 230, 1998, pp. 138-142
Citations number
26
Categorie Soggetti
Material Science, Ceramics
ISSN journal
00223093
Volume
230
Year of publication
1998
Part
A
Pages
138 - 142
Database
ISI
SICI code
0022-3093(1998)230:<138:LHROHI>2.0.ZU;2-J
Abstract
Hydrogen rearrangements at the H-2 complex are used as a model of low energy, local transitions in the two-hydrogen density of states of hy drogenated amorphous silicon (a-Si:H). These are used to account for t he low activation energy motion of H observed by nuclear magnetic reso nance, the low energy defect annealing of defects formed by bias stres s in thin film transistors, and the elimination of hydrogen from the g rowth zone during the low temperature plasma deposition of a-Si:H. (C) 1998 Elsevier Science B.V. All rights reserved.