Hydrogen rearrangements at the H-2 complex are used as a model of low
energy, local transitions in the two-hydrogen density of states of hy
drogenated amorphous silicon (a-Si:H). These are used to account for t
he low activation energy motion of H observed by nuclear magnetic reso
nance, the low energy defect annealing of defects formed by bias stres
s in thin film transistors, and the elimination of hydrogen from the g
rowth zone during the low temperature plasma deposition of a-Si:H. (C)
1998 Elsevier Science B.V. All rights reserved.