THERMALLY STIMULATED CONDUCTIVITY AT LOW-TEMPERATURES IN NONCRYSTALLINE SEMICONDUCTORS

Authors
ZHU M BARANOVSKII SD FABER T HENSEL F THOMAS P
Citation
M. Zhu et al., THERMALLY STIMULATED CONDUCTIVITY AT LOW-TEMPERATURES IN NONCRYSTALLINE SEMICONDUCTORS, Journal of non-crystalline solids, 230, 1998, pp. 162-165
Citations number
12
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
230
Year of publication
1998
Part
A
Pages
162 - 165
Database
ISI
SICI code
0022-3093(1998)230:<162:TSCALI>2.0.ZU;2-S
Abstract
A new theory of thermostimulated currents at low temperatures has been recently suggested. We use this theory to study the effect of defect concentration on thermostimulated conductivity in hydrogenated amorpho us silicon. (C) 1998 Elsevier Science B.V. All rights reserved.