RANDOM TEMPORAL FLUCTUATIONS OF LOCALIZED-STATE ENERGIES

Random fluctuations of the energy level of localized states in the ban dgap of amorphous semiconductors can affect the release of carriers tr apped in gap states, and therefore may affect all experiments or proce sses where such release plays a role. Since the amplitude of the fluct uations is an important factor, and long trapping times are correlated with large amplitudes, the effects are strongest at low temperatures and for the deepest states. A model based on a-Si:H is used to illustr ate the concepts. (C) 1998 Elsevier Science B.V. All rights reserved.