TIME RELAXATION OF SPACE-CHARGE-LIMITED CONDUCTIVITY IN A-SI-H

The long relaxation of the space-charge-limited conductivity due to th e space charge prepared by an injection of the electrons in various n( +)-i-n(+) devices has been studied in detail. The increase of the cond uctivity at long times can be expressed by the simple relation which i s a function of the density of states. Measurements of the relaxation process together with measurements of space-charge-limited currents en abled to determine the magnitude of the attempt-to-escape frequency fo r the undoped a-Si:H in the range (9-14) X 10(10) s(-1) using n(+)-i-n (+) devices prepared in different laboratories. (C) 1998 Elsevier Scie nce B.V. All rights reserved.