REEXAMINATION OF HIGH DRIFT MOBILITY A-SI-H

We present the results of reexamination of the drift mobility of amorp hous hydrogenated silicon prepared under controlled ion bombardment, f or which the preliminary results indicated an increase of drift mobili ty to 60 cm(2)/V s for electrons. Possible sources of complications ar e tested first, namely the effects of potential minimum under the forw ard bias. On the basis of current transients, measured by time of flig ht method at different applied voltages and different temperatures, we determine room temperature drift mobility to mu(D) = 5 cm(2)/V s and discuss related problems. (C) 1998 Elsevier Science B.V. All rights re served.