DETECTION OF PHOTOINDUCED STRUCTURAL-CHANGE IN A-SI-H BY BENDING EFFECT

Photoinduced structural change in films of a-Si:H has been studied by using the bending effect. The film shows a small expansion by light so aking, and this expansion is recovered by thermal annealing. A correla tion between the photoinduced expansion and the photoinduced defect cr eation has been observed. The experimental results suggest that the ph otoinduced expansion is closely related to the photoinduced defect cre ation and the intrinsic stress in the film. (C) 1998 Elsevier Science B.V. All rights reserved.