RELATION BETWEEN PHOTOCREATED AND THERMALLY-QUENCHED DEFECTS IN A-SI-H

It was found that light-soaked and thermally-quenched a-Si:H films wit h the same density of neutral dangling bonds, D-0 (3 X 10(16) cm(-3) i ncluding the surface defects) have different light-induced ESR spectra and different dark- and photoconductivities. We carried out the light -soaking for these two films and found that the D-0-creation rate for the thermally-quenched film is larger than that for the light-soaked f ilm. From these results, we conclude that the Si-Si weak bond plays a role of the photocreation of D-0. (C) 1998 Elsevier Science B.V. All r ights reserved.