LIGHT-INDUCED ANNEALING OF DANGLING BONDS IN HE-DILUTED GLOW-DISCHARGE A-SI-H FILMS

We report the results of a study of light-induced annealing of danglin g bonds, as well as their light-induced creation in He-diluted glow di scharge a-Si:H with a large amount of hydrogen at room temperature (RT ) and at 75 degrees C, by using an electron spin resonance (ESR) techn ique. Under illumination 0.7 W/cm(2) at room temperature, dangling bon ds are created by prolonged illumination, and their density tends to s aturate. On the other hand, under strong illumination (1.6 W/cm(2)) at room temperature, dangling bonds are initially created and then photo annealed after 5 min of illumination. These results for He-diluted glo w discharge samples are discussed and compared with those for standard and H-2-diluted glow discharge samples. (C) 1998 Elsevier Science B.V . All rights reserved.