1.54 MU-M PHOTOLUMINESCENCE OF ER-CONTAINING N-DOPED A-SI-H

Nitrogen-doped hydrogenated amorphous SiEr (a-SiEr:H) films were depos ited by co-sputtering from an Er partially covered Si target. Photolum inescence, infrared absorption and Raman spectroscopies were performed as a function of thermal annealing treatments and Er concentrations. As-deposited N-doped a-SiEr:H samples exhibit 1.54 mu m Er3+ photolumi nescence at room temperature and reaches its maximum after cumulative thermal annealing at - 500 degrees C. in addition to the Er3+ light em ission increase, thermal annealing induces the effusion of hydrogen an d nitrogen bonded to silicon atoms. The experimental data indicate tha t both the hydrogen and nitrogen concentration improve the Er3+ light emission at 1.54 mu m by decreasing the rate of non-radiative processe s. (C) 1998 Elsevier Science B.V. All rights reserved.