CONTAMINATION OF SILICON DURING ION-IMPLANTATION AND ANNEALING

Authors
LIU X POHL RO ASHER S CRANDALL RS
Citation
X. Liu et al., CONTAMINATION OF SILICON DURING ION-IMPLANTATION AND ANNEALING, Journal of non-crystalline solids, 230, 1998, pp. 407-410
Citations number
10
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of non-crystalline solids → ACNP
ISSN journal
00223093
Volume
230
Year of publication
1998
Part
A
Pages
407 - 410
Database
ISI
SICI code
0022-3093(1998)230:<407:COSDIA>2.0.ZU;2-W
Abstract
Low temperature (<10 K) internal friction measurements have revealed a contamination of silicon during annealing under all but the most care ful conditions. A similar contamination occurs during ion-implantation . Boron was suspected as a likely contaminant, but can be clearly rule d out by combining low-temperature internal friction measurements and secondary ion mass spectroscopy. (C) 1998 Elsevier Science B.V. All ri ghts reserved.