LOCAL ORDER STUDIES OF C-RICH AMORPHOUS SILICON-CARBON THIN-FILMS

Polymer-like hydrogenated amorphous carbon (a-C:H) films containing in creasing concentrations of Si atoms (up to 12 at.%) have been Frown us ing a dual-mode plasma (microwave and radiofrequency) plasma enhanced chemical vapor deposition reactor with low ion energies. X-ray emissio n and X-ray photoelectron spectroscopies (giving respectively Si 3p st ates and the total valence band states) have been used to probe the el ectronic structure. Complementary information on the local bonding hav e been obtained from the Si 2p and C 1s core levels. These results sho w that the Si bonding environments are consistent with Si-C-4 units. T he influence of the tetrahedrally bonded Si atoms on the C atom local environment is basically explained by a topological effect rather than a change in the C hybridization. (C) 1998 Elsevier Science B.V. All r ights reserved.