WIDE-BAND GAP A-SIC-H FILMS FOR OPTOELECTRONIC APPLICATIONS

a-SiC:H samples over the entire compositional range have been deposite d by using 13.56 MHz radio frequency chemical vapor deposition (RF-CVD ) with C2H2 carbon source and electron cyclotron resonance chemical va por deposition with C2H4 source. Films with the largest deposition rat es have been obtained in the C-rich regime with defect density similar to 10(17) cm(-3). Compositional, optical, structural and radiative em ission properties have been investigated and correlated for specimens obtained from both deposition techniques. (C) 1998 Elsevier Science B. V. All rights reserved.