STUDY OF SIOX DECOMPOSITION KINETICS AND FORMATION OF SI NANOCRYSTALSIN AN SIOX MATRIX

The kinetics of the decomposition of silicon suboxides (SiOx, 0.7 < x < 1.3) was studied as function of post deposition annealing treatment. Amorphous Si:O:H alloys were deposited by remote plasma enhanced chem ical vapor deposition and subjected to rapid thermal anneal. Extent of reaction was monitored by Fourier transform infrared analysis. For al l compositions, it was found that there was a fast initial reaction as sociated with hydrogen loss, followed by a decelatory reaction that is described as 3-dimensional diffusion limited. However the reaction is strongly deceleratory at temperatures less than 900 degrees C, thus S iOx stability is found through kinetic hindrance. Photoluminescence (P L) experiments showed that the decomposition reaction proceeds in the amorphous state with the observation of a-Si PL after high temperature anneals up to 800 degrees C and H-2 plasma passivation. (C) 1998 Else vier Science B.V. All rights reserved.