TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE PROPERTIES OF POLYSILANES

We have determined an absolute internal quantum efficiency (eta(int)) of various alkyl- and phenyl-based polysilanes by photoluminescence (P L) in the temperature range between 10 and 300 K. Larger eta(int) have been obtained usually in dialkyl-based polysilanes (e.g., 90% at 10 K and 27% at 300 K for polydihexylsilane (PDHS)). The smaller eta(int) Of polymethylphenylsilane (PMPS) turned out to be due to the resonant energy-transfer between main- and side-chains. By introducing branchin g into Si main-chain in the PMPS, the effect of electronic delocalizat ion on the luminescence characteristics has been investigated. A polyd imethylsilane (PDMS) deposited on an indium tin oxide (ITO)-covered gl ass was electroluminesced (EL) at both 77 and 300 K, indicating a poss ibility for light emitting applications. (C) 1998 Elsevier Science B.V . All rights reserved.