METASTABLE STATES IN POLY(METHYLPHENYLSILYLENE) INDUCED BY UV-RADIATION AND ELECTRON-BEAM

We have examined and measured the density of states (DOS) in a prototy pical poly(silylene)-poly(methylphenylsilylene) (PMPSi) using the meth od of post-transit hole emission signals from traps using the time of flight (TOF) photoconductivity method, The main goal of our measuremen ts was to correlate the metastable states produced both by UV radiatio n and electron beam and to determine their basic parameters as to thei r energies and susceptibility for annealing. In the course of measurem ents we discovered in accordance with our previous observations the fu lly reversible states around and deeper than 0.55 eV. (C) 1998 Elsevie r Science B.V, All rights reserved.