The pick-and-place multi-wafer bonding technology is demonstrated by s
imultaneous direct bonding of nine I.3 mu m InP strain-compensated mul
tiquantum welt wafers to a GaAs substrate. Both thr bonded sample and
the control sample showed identical X-ray diffraction characteristics
and the bonded wafers had similar to 75% room temperature photolumines
cence intensities relative to the control sample.