ALGAAS GAAS TUNNELING DIODE INTEGRATED WITH NANOMETER-SCALE OXIDES PATTERNED BY ATOMIC-FORCE MICROSCOPE/

Authors
OKADA Y AMANO S IUCHI Y KAWABE M HARRIS JS
Citation
Y. Okada et al., ALGAAS GAAS TUNNELING DIODE INTEGRATED WITH NANOMETER-SCALE OXIDES PATTERNED BY ATOMIC-FORCE MICROSCOPE/, Electronics Letters, 34(12), 1998, pp. 1262-1263
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
12
Year of publication
1998
Pages
1262 - 1263
Database
ISI
SICI code
0013-5194(1998)34:12<1262:AGTDIW>2.0.ZU;2-U
Abstract
The authors have Fabricated a tunnel diode comprising a two-dimensiona l electron gas channel formed at an AlGaAs/GaAs heterojunction by mole cular beam epitaxy and nanometre-scale oxides locally generated using an atomic force microscope (AFM). The AFM-generated oxide lines have b een adopted as integral parts of the device, for the first time servin g as effective tunnel barriers for single electron transport.