EFFECT OF POLYSILICON DEPLETION EFFECT ON SERIES RESISTANCE AND TRANSCONDUCTANCE OF MOS-TRANSISTORS AT 4.2 K

Authors
GUTIERREZD EA
Citation
Ea. Gutierrezd, EFFECT OF POLYSILICON DEPLETION EFFECT ON SERIES RESISTANCE AND TRANSCONDUCTANCE OF MOS-TRANSISTORS AT 4.2 K, Electronics Letters, 34(12), 1998, pp. 1264-1265
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
12
Year of publication
1998
Pages
1264 - 1265
Database
ISI
SICI code
0013-5194(1998)34:12<1264:EOPDEO>2.0.ZU;2-W
Abstract
Experimental results of the effect of the polysilicon depletion effect on 0.5 mu m MOS transistors, operated at 4.2K, are shown here. These results serve to shed light on the interplay of series resistance, fre eze-out. and field-induced charge ionisation effects on the characteri sation and modelling of sub-micrometre MOSFETs operated at 4.2K.