FABRICATION OF SOI SUBSTRATES WITH ULTRA-THIN SI LAYERS

Authors
HOBART KD KUB FJ JERNIGAN GG TWIGG ME THOMPSON PE
Citation
Kd. Hobart et al., FABRICATION OF SOI SUBSTRATES WITH ULTRA-THIN SI LAYERS, Electronics Letters, 34(12), 1998, pp. 1265-1267
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
12
Year of publication
1998
Pages
1265 - 1267
Database
ISI
SICI code
0013-5194(1998)34:12<1265:FOSSWU>2.0.ZU;2-K
Abstract
A simple technique for the fabrication of ultra-thin silicon-on-insula tor (SOI) substrates is presented. The bond-and-etch-back technique ut ilising an SixGe1-x etch stop has been combined with the thin film sep aration by hydrogen implantation approach, and SOI substrates with ult ra-thin (< 5nm) Si layers have been successfully fabricated.