THE INFLUENCE OF METAL CONTACTS AND ZNO BUFFER-LAYER ON THE LOW-TEMPERATURE CRYSTALLIZATION OF ALPHA-SI-H IN FLEXIBLE SOLAR-CELLS

It is demonstrated that crystallization of alpha-Si:H in cells grown o n metallized polymer substrates occurs at temperatures below similar t o 160 degrees C. X-ray diffraction and Raman studies indicate that the extent of crystallization is larger for silver than for aluminum coat ed polymers, and increases with deposition temperature. Results are pr esented for the strong impediment of the crystallization of alpha-Si:H with the insertion of a thin ZnO buffer-layer between the metal and a lpha-Si:H. It is further demonstrated that aluminum crystallizes when alpha-Si:H is deposited onto it. (C) 1998 Elsevier Science B.V. All ri ghts reserved.