RED-SHIFT OF STIMULATED-EMISSION IN ZNSE-BASED SEMICONDUCTORS

A red-shift in the stimulated emission wavelength with increasing inte nsity is observed using picosecond laser excitation of molecular-beam- epitaxial ZnSe epilayers and ZnSe-based quantum-well structures. This red-shift occurs across a wide temperature range (4-300 K) and for a w ide range of epilayer and quantum-well samples. We show that sample he ating is not the origin of this shift. A variety of emission mechanism s are discussed but none provides a complete description of the observ ed experimental trends. (C) 1998 Elsevier Science B.V. All rights rese rved.