MICROWAVE-OPTOELECTRONIC MODELING APPROACHES FOR SEMICONDUCTOR-LASERS

Authors
Citation
Kc. Sum et Nj. Gomes, MICROWAVE-OPTOELECTRONIC MODELING APPROACHES FOR SEMICONDUCTOR-LASERS, IEE proceedings. Optoelectronics, 145(3), 1998, pp. 141-146
Citations number
27
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics,Telecommunications
ISSN journal
13502433
Volume
145
Issue
3
Year of publication
1998
Pages
141 - 146
Database
ISI
SICI code
1350-2433(1998)145:3<141:MMAFS>2.0.ZU;2-#
Abstract
A study into semiconductor-laser modelling approaches for the microwav e/millimetre-wave frequency regime is presented. Two approaches have b een investigated in detail, First, an integrated-equivalent-circuit mo del which covers both parasitic and intrinsic components of the laser has been implemented in a microwave-circuit simulator. The potential o f this modelling approach has been demonstrated by simulating complete optical transmitters (including external circuits). Secondly, a combi ned model which includes part of the equivalent-circuit model and a nu merical time-domain model based on coupled-wave theory has been develo ped. This combined model permits the modelling of both electrical and optical characteristics for more complex laser structures and it has b een employed in applications such as circuit design for chirp and inte nsity-fluctuation suppression with multielectrode distributed-feedback (DFB) lasers and an investigation into distributed microwave effects on the short pulses generated from a single-electrode DFB laser under gain-switched conditions.