Kc. Sum et Nj. Gomes, MICROWAVE-OPTOELECTRONIC MODELING APPROACHES FOR SEMICONDUCTOR-LASERS, IEE proceedings. Optoelectronics, 145(3), 1998, pp. 141-146
A study into semiconductor-laser modelling approaches for the microwav
e/millimetre-wave frequency regime is presented. Two approaches have b
een investigated in detail, First, an integrated-equivalent-circuit mo
del which covers both parasitic and intrinsic components of the laser
has been implemented in a microwave-circuit simulator. The potential o
f this modelling approach has been demonstrated by simulating complete
optical transmitters (including external circuits). Secondly, a combi
ned model which includes part of the equivalent-circuit model and a nu
merical time-domain model based on coupled-wave theory has been develo
ped. This combined model permits the modelling of both electrical and
optical characteristics for more complex laser structures and it has b
een employed in applications such as circuit design for chirp and inte
nsity-fluctuation suppression with multielectrode distributed-feedback
(DFB) lasers and an investigation into distributed microwave effects
on the short pulses generated from a single-electrode DFB laser under
gain-switched conditions.