THE SWITCHING BEHAVIOR OF THE SHORTED ANODE BASE RESISTANCE MOS-CONTROLLED THYRISTOR

Citation
D. Flores et al., THE SWITCHING BEHAVIOR OF THE SHORTED ANODE BASE RESISTANCE MOS-CONTROLLED THYRISTOR, Microelectronics, 29(8), 1998, pp. 505-508
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00262692
Volume
29
Issue
8
Year of publication
1998
Pages
505 - 508
Database
ISI
SICI code
0026-2692(1998)29:8<505:TSBOTS>2.0.ZU;2-8
Abstract
The electrical performance of a shorted anode BRT structure is describ ed. It is shown that the inclusion of the back side shorted anode stru cture reduces the BRT transient losses since it allows a direct path f or the extraction of electrons stored in the N- region during the turn -off process. The static and transient device operation has been analy sed by numerical simulations. The reduction of the turn-off losses has been experimentally demonstrated by experimental data from fabricated 1100 V multicell structures. (C) 1998 Elsevier Science Ltd. All right s reserved.