We present ab-initio molecular dynamics calculations for the chemisorp
tion of Cl on GaAs(110), to study the adsorption sites and the present
ation of surface order at the early stages of adsorption. We simulated
the impact of a single Cl-2 molecule on the surface using a (2 x 2) s
urface cell and the repeated slab geometry. Along the dynamical path d
issociation occurs, bonds are created between Cl and the atoms of Ga a
nd As and local quenching of the buckling relaxation is found. The dyn
amical results are compared with the optimization geometries obtained
by allowing the two Cl atoms to adsorb on Ga and As. The adsorption on
both sites is the most stable arrangement. Disorder effects are seen
in the dynamics. (C) 1998 Elsevier Science B.V. All rights reserved.