INCREASED RATE OF OZONE ADSORPTION ON SI(111)-(7X7) WITH NITROGEN PREADSORPTION

Citation
K. Nakamura et al., INCREASED RATE OF OZONE ADSORPTION ON SI(111)-(7X7) WITH NITROGEN PREADSORPTION, Surface science, 404(1-3), 1998, pp. 165-169
Citations number
20
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
404
Issue
1-3
Year of publication
1998
Pages
165 - 169
Database
ISI
SICI code
0039-6028(1998)404:1-3<165:IROOAO>2.0.ZU;2-U
Abstract
We observed by surface second harmonic generation (SHG) that initial t he rate of second harmonics (SH) intensity decay during ozone adsorpti on on nitrogen-preadsorbed Si(111) was four times faster than on clean Si(111)-(7 x 7) because of the adsorption not only of atomic oxygen b ut also of oxygen molecules released by the dissociation of incident o zone molecules. The temperature dependence of the adsorption rate on n itrogen-adsorbed Si(111) was opposite to that on the clean Si(111)-(7 x 7) surface, but similar to that of molecular oxygen on Si(111)-(7 x 7). With increasing surface temperature, the sticking probability less ened in a similar way to that of molecular oxygen. This suggests that the sticking probability of molecular oxygen released by dissociating ozone molecules increases on nitrogen-adsorbed Si(111). (C) 1998 Elsev ier Science B.V. All rights reserved.