Clean Si(111) 7 x 7 surfaces have been exposed to ammonia once heated
to a constant temperature until saturation of the nitrogen uptake. The
temperatures ranged from 25 degrees C to 500 degrees C, upon which sa
turation coverage theta increased from 0.2 to 1 ML. The N-saturated su
rface has been studied by low-energy electron diffraction, Auger elect
ron spectroscopy and photoemission yield spectroscopy as a function of
the reaction temperature. The interaction appears as a three-step pro
cess: from 25 degrees to 200 degrees C, ammonia dissociates into H and
NH2 which occupy at random the Si dangling bonds, keeping the 7 x 7 o
rder and theta = 0.2 ML; then up to 320 degrees C, the only change is
a re-ordering of the same adsorbed species driven by electronic and ge
ometric smoothing of the surface; the third step occurs around 350 deg
rees C and corresponds to an increased N uptake to theta = 1 ML and a
growing surface disorder in correlation with the continuous removal of
dangling bonds resulting from hydrogen loss. (C) 1998 Elsevier Scienc
e B.V. All rights reserved.