The reflected optical second harmonic (SH) intensity from GaAs(001) ha
s been measured in air as a function of the incident photon energy. A
resonance enhancement peak was found at similar to 1.45 eV in the p-po
larized input and p-polarized output (p-in/p-cut) configuration. Becau
se the sum frequency generation (SFG) intensity shows a one-photon res
onance at the same photon energy, the observed structure in the SH int
ensity curve is also due to a one-photon resonance. The bulk SH respon
se of GaAs was separately observed in the p-in/s-out polarization conf
iguration and does not show a resonance at this photon energy. Thus it
is concluded that the observed resonance at similar to 1.45 eV origin
ates from the oxidized surface of GaAs(001). (C) 1998 Elsevier Science
B.V. All rights reserved.