ELECTRON ACCUMULATION AT THE INAS(110) CLEAVAGE SURFACE

Citation
Hs. Karlsson et al., ELECTRON ACCUMULATION AT THE INAS(110) CLEAVAGE SURFACE, Surface science, 404(1-3), 1998, pp. 590-594
Citations number
18
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
404
Issue
1-3
Year of publication
1998
Pages
590 - 594
Database
ISI
SICI code
0039-6028(1998)404:1-3<590:EAATIC>2.0.ZU;2-U
Abstract
The InAs(110) cleavage surface is studied by photoelectron spectroscop y based on an amplified short-pulse titanium:sapphire laser system in both probe-only and pump-and-probe modes. The probe-only spectra show that electrons accumulate in the conduction band at the surface as a f unction of time after cleavage, while the pump-and-probe spectra show a different response from the excited accumulation layer peak when usi ng s- and p-polarized probe pulses. Moreover, no surface photovoltage is detected when the accumulation layer is optically pumped. (C) 1998 Elsevier Science B.V. All rights reserved.