GA-RICH GAP(001)(2X4) SURFACE-STRUCTURE STUDIED BY LOW-ENERGY ION-SCATTERING SPECTROSCOPY

Authors
NAITOH M KONISHI A INENAGA H NISHIGAKI S OISHI N SHOJI F
Citation
M. Naitoh et al., GA-RICH GAP(001)(2X4) SURFACE-STRUCTURE STUDIED BY LOW-ENERGY ION-SCATTERING SPECTROSCOPY, Surface science, 404(1-3), 1998, pp. 623-627
Citations number
15
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
404
Issue
1-3
Year of publication
1998
Pages
623 - 627
Database
ISI
SICI code
0039-6028(1998)404:1-3<623:GGSSBL>2.0.ZU;2-T
Abstract
We report the results of low-energy He+-ion scattering spectroscopy in vestigation of a Ga-rich GaP(001)(2 x 4) surface prepared by Ne+-ion b ombardment and annealing. The incidence-angle a dependence of the scat tered ion intensity was obtained along the [1(1) over bar 0] two-fold direction and the [110] four-fold direction. Our results suggest that this Ga-rich GaP(001) surface contains a Ga double-layer consisting of a (2 x 4)-arrangement of two Ga-dimers on top of the second Ga-layer. (C) 1998 Elsevier Science B.V. All rights reserved.