ADSORPTION STRUCTURE AND SILICIDE FORMATION OF BA ON THE SI(001) SURFACE

Citation
Y. Takeda et al., ADSORPTION STRUCTURE AND SILICIDE FORMATION OF BA ON THE SI(001) SURFACE, Surface science, 404(1-3), 1998, pp. 692-696
Citations number
5
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
404
Issue
1-3
Year of publication
1998
Pages
692 - 696
Database
ISI
SICI code
0039-6028(1998)404:1-3<692:ASASFO>2.0.ZU;2-L
Abstract
The behaviour of Ba atoms on the Si(001) surface was investigated by l ow-energy electron diffraction (LEED). An epitaxial silicide formation was observed for surfaces obtained both by deposition onto a substrat e kept at 700 degrees C and by annealing at 600 degrees C after deposi tion at room temperature. These surfaces show [GRAPHICS] and [GRAPHICS ] oblique patterns which have a unit cell close to six times and three times, respectively, as large as that of the BaSi2(111) surface. In a ddition to the (2 x 3), (2 x 1) and (2 x 4) structures at submonolayer coverage, a c(2 x 6) pattern was found. The two-fold periodicities of the (2 x 4) and (2 x 3) superstructures were determined to be paralle l to the dimer direction using a single-domain Si(001)-(2 x 1) substra te. (C) 1998 Elsevier Science B.V. All rights reserved.