C. Setzer et al., LEED INTENSITY AND SURFACE CORE-LEVEL SHIFT ANALYSIS OF THE MBE-PREPARED GAAS((1)OVER-BAR(1)OVER-BAR(1)OVER-BAR)B(2X2) SURFACE, Surface science, 404(1-3), 1998, pp. 782-785
Using a recently developed MBE apparatus, the GaAs((1) over bar (1) ov
er bar (1) over bar)B(2 x 2) surface was prepared and studied in situ
by photoemission and LEED intensity analysis. The measured surface cor
e level shifts of the Ga and As 3d core levels support the atomic geom
etry of the As-trimer model whose detailed structure was determined by
LEED intensity analysis. (C) 1998 Elsevier Science B.V. All rights re
served.