LEED INTENSITY AND SURFACE CORE-LEVEL SHIFT ANALYSIS OF THE MBE-PREPARED GAAS((1)OVER-BAR(1)OVER-BAR(1)OVER-BAR)B(2X2) SURFACE

Citation
C. Setzer et al., LEED INTENSITY AND SURFACE CORE-LEVEL SHIFT ANALYSIS OF THE MBE-PREPARED GAAS((1)OVER-BAR(1)OVER-BAR(1)OVER-BAR)B(2X2) SURFACE, Surface science, 404(1-3), 1998, pp. 782-785
Citations number
13
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
404
Issue
1-3
Year of publication
1998
Pages
782 - 785
Database
ISI
SICI code
0039-6028(1998)404:1-3<782:LIASCS>2.0.ZU;2-X
Abstract
Using a recently developed MBE apparatus, the GaAs((1) over bar (1) ov er bar (1) over bar)B(2 x 2) surface was prepared and studied in situ by photoemission and LEED intensity analysis. The measured surface cor e level shifts of the Ga and As 3d core levels support the atomic geom etry of the As-trimer model whose detailed structure was determined by LEED intensity analysis. (C) 1998 Elsevier Science B.V. All rights re served.