DISLOCATIONS, GRAIN-SIZE AND PLANAR FAULTS IN NANOSTRUCTURED COPPER DETERMINED BY HIGH-RESOLUTION X-RAY-DIFFRACTION AND A NEW PROCEDURE OF PEAK PROFILE ANALYSIS
T. Ungar et al., DISLOCATIONS, GRAIN-SIZE AND PLANAR FAULTS IN NANOSTRUCTURED COPPER DETERMINED BY HIGH-RESOLUTION X-RAY-DIFFRACTION AND A NEW PROCEDURE OF PEAK PROFILE ANALYSIS, Acta materialia, 46(10), 1998, pp. 3693-3699
Citations number
35
Categorie Soggetti
Material Science","Metallurgy & Metallurigical Engineering
The particle size and the dislocation structure in inert gas condensed
nanocrystalline copper were determined by high-resolution X-ray diffr
action profile analysis. Well-behaved smooth curves were obtained in t
he modified Williamson-Hall plot and the modified Warren-Averbach plot
through knowledge of the variation in dislocation contrast with Bragg
reflection and the effect of twinning on particle size. The particle
size was between 14 and 30 nm, in agreement with TEM results. The root
-mean-squared strains were explained by the presence of dislocations,
with a dislocation density of about 5 x 10(15) m(-2). The dislocations
were found to have screw character probably related to the particle g
rowth mechanism. (C) 1998 Acta Metallurgica Inc.